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Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications.
IRFZ48N
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 64 140 175 16 UNIT V A W C m
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 20 64 45 210 140 175 UNIT V V V A A A W C
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS in free air TYP. 60 MAX. 1.1 UNIT K/W K/W
February 1999
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
STATIC CHARACTERISTICS
Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Gate-source breakdown voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C VDS = 55 V; VGS = 0 V; VGS = 10 V; VDS = 0 V IG = 1 mA; VGS = 10 V; ID = 25 A Tj = 175C Tj = 175C Tj = 175C MIN. 55 50 2 1 16 TYP. 3.0 0.05 0.02 12 -
IRFZ48N
MAX. 4.0 4.4 10 500 1 20 16 30
UNIT V V V V V A A A A V m m
DYNAMIC CHARACTERISTICS
Tmb = 25C unless otherwise specified SYMBOL gfs Ciss Coss Crss Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 25 A VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. 8 TYP. 39 2200 500 200 18 35 45 30 3.5 4.5 7.5 MAX. 2900 600 270 85 19 37 26 85 60 45 UNIT S pF pF pF nC nC nC ns ns ns ns nH nH nH
ID = 50 A; VDD = 44 V; VGS = 10 V
VDD = 30 V; ID = 25 A; VGS = 10 V; RG = 10 Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad
February 1999
2
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 65 A; VGS = 0 V IF = 65 A; -dIF/dt = 100 A/s; VGS = -10 V; VR = 30 V TYP. 0.95 1.0 57 0.14
IRFZ48N
MAX. 64 210 1.2 -
UNIT A A V V ns C
AVALANCHE LIMITING VALUE
SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 65 A; VDD 25 V; VGS = 10 V; RGS = 50 ; Tmb = 25 C MIN. TYP. MAX. 200 UNIT mJ
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
120 110 100 90 80 70 60 50 40 30 20 10 0
ID%
Normalised Current Derating
0
20
40
60
80 100 Tmb / C
120
140
160
180
0
20
40
60
80 100 Tmb / C
120
140
160
180
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 5 V
February 1999
3
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
IRFZ48N
SOAX514
RDS(ON)/mOhm 30 VGS/V = 6 6.5 7 20 8 15 9 10
1000
ID / A
RDS(ON) = VDS/ID 100
tp = 1 us 10 us 100 us DC 1 ms
25
10
10
10 ms 100 ms 1
5
1
10 VDS / V
55
100
0
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 ID/A
Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS
100 ID/A 80
1E+01
Zth / (K/W)
BUKX514-55
1E+00 0.5 1E-01 0.2 0.1 0.05 0.02 1E-02 0 T t
20 60
P D
tp
D=
tp T
40
Tj/C =
175
25
1E-03 1E-07
1E-05
1E-03 t/s
1E-01
1E+01
0
0
1
2
3
4
5 VGS/V
6
7
8
9
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
100 ID/A 80
Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
40 gfs/S 35 30
16 10
8 7.5
VGS/V =
7
6.5 60 6 40 5.5
25 20 15 10
20 5 0 4.5 4 0 2 4 VDS/V 6 8 10
5 0 0 20 40 60 80 100
ID/A
Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS
Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V
February 1999
4
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
IRFZ48N
2.5
a
BUK959-60
Rds(on) normlised to 25degC
4 3.5
Thousands (pF)
2
3 2.5 2 1.5 1 5 Coss Crss 100 Ciss
1.5
1
0.5 -100
-50
0
50 Tmb / degC
100
150
200
0 0.01
0.1
1
VDS/V
10
Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
VGS(TO) / V max. 4 typ. 3 min. 2
BUK759-60
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
12 VGS/V 10 VDS = 14V 8 VDS = 44V
5
6
4
1
2
0 -100
-50
0
50 Tj / C
100
150
200
0
0
10
20
30 QG/nC 40
50
60
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Sub-Threshold Conduction
Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 50 A; parameter VDS
100 IF/A 80
1E-01
1E-02 2% typ 98%
60 Tj/C = 40 175 25
1E-03
1E-04
20
1E-05
0
1E-06
0
0.2
0.4
0
1
2
3
4
5
0.6 0.8 VSDS/V
1
1.2
1.4
Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
February 1999
5
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
IRFZ48N
120 110 100 90 80 70 60 50 40 30 20 10 0
WDSS%
+
RD VDS VGS 0 RG T.U.T.
VDD
-
20
40
60
80
100 120 Tmb / C
140
160
180
Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 75 A
Fig.17. Switching test circuit.
+
L VDS VGS 0 RGS T.U.T. R 01 shunt
VDD
-ID/100
Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS - VDD )
February 1999
6
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
IRFZ48N
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8".
February 1999
7
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
IRFZ48N
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
February 1999
8
Rev 1.000

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